Initial Frequency Degradation and Variation on Ring Oscillators from Plasma Induced Damage in Fully-Depleted Silicon on Insulator Process

Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65nm bulk and fully depleted silicon-on-insulator processes

Negative Bias Temperature Instability by Body Bias on Ring Oscillators in Thin BOX Fully-Depleted Silicon on Insulator Process

Body Bias (BB) control on Silicon On Insulator (SOI) mitigates power consumption on the stand-by mode. However, Negative Bias Temperature Instability (NBTI) changes by BB. We measure the NBTI of ring oscillators on thin buried oxide (BOX) fully-depleted SOI process. NBTI is suppressed and power consumption becomes lower by applying Reverse BB (RBB) because larger threshold voltage decreases car...

Initial and Long-Term Frequency Degradation on Ring Oscillators from Plasma Induced Damage in 65 nm Bulk and Silicon On Thin BOX processes

Degradation of reliability caused by plasma induced damage (PID) has become a significant concern with miniaturizing a device size. In this paper, we measure frequencies of ring oscillators with an antenna structure on a single stage. In bulk, PID is relieved by connecting an antenna to a drain because electric charge flow to a substrate. The difference of initial frequencies is 0.79 % between ...

The Transient Behavior of LC and Ring Oscillators under External Frequency Injection

 In this work, time domain analysis is used to solve Adler’s equation in order to obtain the required time, for an oscillator under external injection, reaching the steady-state condition. Mathematical approach has been applied to fully describe the transient of frequency acquisition in injection-locked LC and Ring oscillators considering their time-varying nature. Then, the analysis is verifie...

Stress-Induced Capacitance of Partially Depleted MOSFETs from Ring Oscillator Delay

In the current study, stress-induced capacitance determined by direct measurement on MOSFETs was compared with that determined by indirect simulation through the delay of CMOS ring oscillators (ROs) fabricated side by side with MOSFETs. External compressive stresses were applied on 〈110〉 silicon-on-insulator (SOI) n-/p-MOSFETs with the ROs in a longitudinal configuration. The measured gate capa...